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NCE3416 Datasheet, NCE Power Semiconductor

NCE3416 mosfet equivalent, n-channel enhancement mode power mosfet.

NCE3416 Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 248.91KB)

NCE3416 Datasheet
NCE3416
Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 248.91KB)

NCE3416 Datasheet

Features and benefits


* VDS = 20V,ID =6.5A RDS(ON) <40mΩ @ VGS=1.8V RDS(ON) <33mΩ @ VGS=2.5V RDS(ON) <27mΩ @ VGS=4.5V ESD Rating: 2000V HBM
* High Power and current handing capability .

Application

.It is ESD protested. General Features
* VDS = 20V,ID =6.5A RDS(ON) <40mΩ @ VGS=1.8V RDS(ON) <33mΩ @ VGS=2.5V RDS(O.

Description

The NCE3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features.

Image gallery

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TAGS

NCE3416
N-Channel
Enhancement
Mode
Power
MOSFET
NCE Power Semiconductor

Manufacturer


NCE Power Semiconductor

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